PART |
Description |
Maker |
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 From old datasheet system M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRF8S7235NR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC Motorola, Inc
|
MAPL-000817-015CPC |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MTP15N05E |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|